Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN | Zendy

Hironori Okumura | Zendy; D. Martin | Zendy; N. Grandjean | Zendy

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Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN

Author(s) -

Hironori Okumura,

D. Martin,

N. Grandjean

Publication year - 2016

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4972408

Subject(s) - doping , quantum tunnelling , non blocking i/o , contact resistance , electrical resistivity and conductivity , molecular beam epitaxy , materials science , field electron emission , analytical chemistry (journal) , acceptor , wide bandgap semiconductor , epitaxy , condensed matter physics , chemistry , optoelectronics , nanotechnology , electron , physics , biochemistry , layer (electronics) , quantum mechanics , chromatography , catalysis

Mg-doped GaN with a net acceptor concentration (NA-ND) in the high 1019 cm−3 range was grown using ammonia molecular-beam epitaxy. Electrical properties of NiO contact on this heavily doped p-type GaN were investigated. A potential-barrier height of 0.24 eV was extracted from the relationship between NA-ND and the specific contact resistivity (ρc). We found that there is an optimum NA-ND value of 5 × 1019 cm−3 for which ρc is as low as 2 × 10−5 Ω cm2. This low ρc is ascribed to hole tunneling through the potential barrier at the NiO/p+-GaN interface, which is well accounted for by the field-emission model

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