Open AccessEvolution of planar defects during homoepitaxial growth of β-Ga2O3 layers on (100) substrates—A quantitative model
Author(s) -
Robert Schewski,
M. Baldini,
K. Irmscher,
Andreas Fiedler,
T. Markurt,
Bettieuschulz,
T. Remmele,
Tobias Schulz,
G. Wagner,
Zbigniew Galazka,
M. Albrecht
Publication year - 2016
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4971957
Subject(s) - nucleation , vicinal , epitaxy , materials science , planar , stacking , diffusion , crystallography , island growth , condensed matter physics , surface diffusion , chemical physics , molecular physics , chemistry , nanotechnology , layer (electronics) , thermodynamics , computer graphics (images) , physics , organic chemistry , adsorption , computer science
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