Open AccessMoS2 based dual input logic AND gate
Author(s) -
Luis M. Martinez,
Nicholas J. Pinto,
Carl H. Naylor,
A. T. Charlie Johnson
Publication year - 2016
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4971857
Subject(s) - logic gate , optoelectronics , materials science , gate dielectric , transistor , gate equivalent , electronic circuit , electrical engineering , and gate , field effect transistor , nor logic , pass transistor logic , voltage , gate oxide , engineering
Crystalline monolayers of CVD MoS2 are used as the active semiconducting channel in a split-gate field effect transistor. The device demonstrates logic AND functionality that is controlled by independently addressing each gate terminal with ±10V. When +10V was simultaneously applied to both gates, the device was conductive (ON), while any other combination of gate voltages rendered the device resistive (OFF). The ON/OFF ratio of the device was ∼ 35 and the charge mobility using silicon nitride as the gate dielectric was 1.2cm2/V-s and 0.1cm2/V-s in the ON and OFF states respectively. Clear discrimination between the two states was observed when a simple circuit containing a load resistor was used to test the device logic AND functionality at 10Hz. One advantage is that split gate technology can reduce the number of devices required in complex circuits, leading to compact electronics and large scale integration based on intrinsic 2-D semiconducting materials
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