High ionic conductivity in confined bismuth oxide-based heterostructures | Zendy

Simone Sanna | Zendy; Vincenzo Esposito | Zendy; Mogens Christensen | Zendy; Nini Pryds | Zendy

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High ionic conductivity in confined bismuth oxide-based heterostructures

Author(s) -

Simone Sanna,

Vincenzo Esposito,

Mogens Christensen,

Nini Pryds

Publication year - 2016

Publication title -

apl materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.571

H-Index - 60

ISSN - 2166-532X

DOI - 10.1063/1.4971801

Subject(s) - materials science , bismuth , conductivity , ionic conductivity , yttria stabilized zirconia , heterojunction , cubic zirconia , pulsed laser deposition , oxide , ionic bonding , phase (matter) , analytical chemistry (journal) , inorganic chemistry , chemical engineering , ceramic , thin film , composite material , nanotechnology , chemistry , optoelectronics , metallurgy , ion , organic chemistry , electrode , chromatography , electrolyte , engineering

Bismuth trioxide in the cubic fluorite phase (δ-Bi2O3) exhibits the highest oxygen ionic conductivity. In this study, we were able to stabilize the pure δ-Bi2O3 at low temperature with no addition of stabilizer but only by engineering the interface, using highly coherent heterostructures made of alternative layers of δ-Bi2O3 and Yttria Stabilized Zirconia (YSZ), deposited by pulsed laser deposition. The resulting [δ-Bi2O3/YSZ] heterostructures are found to be stable over a wide temperature range (500-750 °C) and exhibits stable high ionic conductivity over a long time comparable to the value of the pure δ-Bi2O3, which is approximately two orders of magnitude higher than the conductivity of YSZ bulk

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