Open AccessExperimental and density functional study of Mn doped Bi2Te3 topological insulator
Author(s) -
Arsham Ghasemi,
Demie Kepaptsoglou,
A. I. Figueroa,
Genadi Naydenov,
P. J. Hasnip,
Matt Probert,
Quentin M. Ramasse,
G. van der Laan,
T. Hesjedal,
Vlado K. Lazarov
Publication year - 2016
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.4971354
Subject(s) - topological insulator , valency , dopant , materials science , scanning transmission electron microscopy , density functional theory , doping , electron energy loss spectroscopy , van der waals force , spectroscopy , absorption spectroscopy , band gap , transmission electron microscopy , condensed matter physics , crystallography , nanotechnology , optoelectronics , chemistry , optics , computational chemistry , physics , molecule , philosophy , linguistics , organic chemistry , quantum mechanics
We present a nanoscale structural and density functional study of the Mn doped 3D topological insulator Bi2Te3. X-ray absorption near edge structure shows that Mn has valency of nominally 2+. Extended x-ray absorption fine structure spectroscopy in combination with electron energy loss spectroscopy (EELS) shows that Mn is a substitutional dopant of Bi and Te and also resides in the van der Waals gap between the quintuple layers of Bi2Te3. Combination of aberration-corrected scanning transmission electron microscopy and EELS shows that Mn substitution of Te occurs in film regions with increased Mn concentration. First-principles calculations show that the Mn dopants favor octahedral sites and are ferromagnetically coupled
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