n-ZnO/p-GaN heterojunction light-emitting diodes featuring a buried polarization-induced tunneling junction | Zendy

Ling Li | Zendy; Yuantao Zhang | Zendy; Long Yan | Zendy; Junyan Jiang | Zendy; Han Xu | Zendy; Gaoqiang Deng | Zendy; Chi Chen | Zendy; Junfeng Song | Zendy

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n-ZnO/p-GaN heterojunction light-emitting diodes featuring a buried polarization-induced tunneling junction

Author(s) -

Ling Li,

Yuantao Zhang,

Long Yan,

Junyan Jiang,

Han Xu,

Gaoqiang Deng,

Chi Chen,

Junfeng Song

Publication year - 2016

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4971272

Subject(s) - optoelectronics , materials science , light emitting diode , heterojunction , diode , chemical vapor deposition , quantum tunnelling , wide bandgap semiconductor , ultraviolet , polarization (electrochemistry) , chemistry

n-ZnO/p-GaN heterojunction light-emitting diodes with a p-GaN/Al0.1Ga0.9N/n+-GaN polarization-induced tunneling junction (PITJ) were fabricated by metal-organic chemical vapor deposition. An intense and sharp ultraviolet emission centered at ∼396 nm was observed under forward bias. Compared with the n-ZnO/p-GaN reference diode without PITJ, the light intensity of the proposed diode is increased by ∼1.4-folds due to the improved current spreading. More importantly, the studied diode operates continuously for eight hours with the decay of only ∼3.5% under 20 mA, suggesting a remarkable operating stability. The results demonstrate the feasibility of using PITJ as hole injection layer for high-performance ZnO-based light-emitting devices

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