Physically sound parameterization of incomplete ionization in aluminum-doped silicon | Zendy

Heiko Steinkemper | Zendy; Pietro P. Altermatt | Zendy; Martin Hermle | Zendy

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Physically sound parameterization of incomplete ionization in aluminum-doped silicon

Author(s) -

Heiko Steinkemper,

Pietro P. Altermatt,

Martin Hermle

Publication year - 2016

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4971155

Subject(s) - ionization , silicon , doping , boron , aluminium , formalism (music) , mistake , atomic physics , materials science , physics , optoelectronics , ion , quantum mechanics , metallurgy , nuclear physics , law , musical , art , political science , visual arts

Incomplete ionization is an important issue when modeling silicon devices featuring aluminum-doped p+ (Al-p+) regions. Aluminum has a rather deep state in the band gap compared to boron or phosphorus, causing strong incomplete ionization. In this paper, we considerably improve our recent parameterization [Steinkemper et al., J. Appl. Phys. 117, 074504 (2015)]. On the one hand, we found a fundamental criterion to further reduce the number of free parameters in our fitting procedure. And on the other hand, we address a mistake in the original publication of the incomplete ionization formalism in Altermatt et al., J. Appl. Phys. 100, 113715 (2006)

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