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Self-cleansing of transition metal nitrides is discovered to take place during ultra-high vacuum annealing of TiN, NbN, and VN thin films. Native oxide layers from air exposure disappear after isothermal anneal at 1000 degrees C. Also, for TiN, the Ti 2p and N 1s X-ray photoelectron spectra (XPS) recorded after the anneal are identical to those obtained from in-situ grown and analyzed epitaxial TiN(001). These unexpected effects are explained by oxide decomposition in combination with N-replenishing of the nitride during recrystallization. The finding opens up new possibilities for true bonding assignments through non-destructive XPS analyses, thus avoiding artefacts from Ar etching. (C) 2016 Author(s).<p>Funding Agencies|VINN Excellence Center Functional Nanoscale Materials (FunMat) [2005-02666]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009-00971]; Knut and Alice Wallenberg Foundation [2011.0143]; Aforsk Foundation [16-359]</p

applied physics letters

<i>In-situ</i> observation of self-cleansing phenomena during ultra-high vacuum anneal of transition metal nitride thin films: Prospects for non-destructive photoelectron spectroscopy

In-situ observation of self-cleansing phenomena during ultra-high vacuum anneal of transition metal nitride thin films: Prospects for non-destructive photoelectron spectroscopy