Open AccessErratum: “Epitaxial growth of GaN films on nearly lattice-matched hafnium substrates using a low-temperature growth technique” [APL Mater. 4, 076104 (2016)]
Author(s) -
H. R. Kim,
Jitsuo Ohta,
S. Inoue,
Kohei Ueno,
Atsushi Kobayashi,
Hiroshi Fujioka
Publication year - 2016
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.4968567
Subject(s) - materials science , epitaxy , hafnium , optoelectronics , wide bandgap semiconductor , condensed matter physics , lattice (music) , thin film , nanotechnology , metallurgy , zirconium , physics , layer (electronics) , acoustics
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom