Temperature dependent self-compensation in Al- and Ga-doped Mg0.05Zn0.95O thin films grown by pulsed laser deposition | Zendy

Abdurashid Mavlonov | Zendy; Steffen Richter | Zendy; Holger von Wenckstern | Zendy; Rüdiger SchmidtGrund | Zendy; Michael Lorenz | Zendy; Marius Grundmann | Zendy

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Temperature dependent self-compensation in Al- and Ga-doped Mg0.05Zn0.95O thin films grown by pulsed laser deposition

Author(s) -

Abdurashid Mavlonov,

Steffen Richter,

Holger von Wenckstern,

Rüdiger SchmidtGrund,

Michael Lorenz,

Marius Grundmann

Publication year - 2016

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.4968544

Subject(s) - dopant , materials science , annealing (glass) , doping , analytical chemistry (journal) , solubility , electron mobility , thin film , band gap , absorption edge , electrical resistivity and conductivity , free carrier absorption , chemistry , optoelectronics , metallurgy , nanotechnology , engineering , chromatography , electrical engineering

We studied the doping efficiency of Al and Ga dopants in (Mg,Zn)O alloys as a function of the growth temperature and post growth annealing times. High-temperature growth results in the highest structural quality and highest electron mobility; the doping efficiency is limited by the dopant's solubility. It was investigated in detail that a low growth temperature is needed to achieve free carrier densities above the solubility limit of the dopants. Samples grown at temperatures of 300 °C and below have a free carrier density significantly above the solubility limit yielding the minimum resistivity of ρmin=4.8×10−4 Ω cm for Mg0.05 Zn0.95O:Al thin films grown on glass at 300 °C. Annealing of these samples reduces the free carrier density and the absorption edge to values similar to those of samples grown at high temperatures. The saturation of the free carrier density and the optical bandgap at their high temperature growth/annealing values is explained by the thermal creation of acceptor-like compensating d...

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