Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage | Zendy

Kelson D. Chabak | Zendy; Neil Moser | Zendy; Andrew J. Green | Zendy; Dennis E. Walker | Zendy; Stephen E. Tetlak | Zendy; Eric R. Heller | Zendy; Antonio Crespo | Zendy; Robert Fitch | Zendy; Jonathan P. McCandless | Zendy; Kevin Leedy | Zendy; M. Baldini | Zendy; G. Wagner | Zendy; Zbigniew Galazka | Zendy; Xiuling Li | Zendy; Gregg H. Jessen | Zendy

Open Access

Enhancement-mode Ga₂O₃ wrap-gate fin field-effect transistors on native (100) β-Ga₂O₃ substrate with high breakdown voltage

Author(s) -

Kelson D. Chabak,

Neil Moser,

Andrew J. Green,

Dennis E. Walker,

Stephen E. Tetlak,

Eric R. Heller,

Antonio Crespo,

Robert Fitch,

Jonathan P. McCandless,

Kevin Leedy,

M. Baldini,

G. Wagner,

Zbigniew Galazka,

Xiuling Li,

Gregg H. Jessen

Publication year - 2016

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4967931

Subject(s) - materials science , substrate (aquarium) , optoelectronics , gate dielectric , field effect transistor , transistor , etching (microfabrication) , gate oxide , threshold voltage , mosfet , fin , doping , gallium , dielectric , high κ dielectric , analytical chemistry (journal) , voltage , electrical engineering , nanotechnology , chemistry , layer (electronics) , oceanography , engineering , composite material , chromatography , geology , metallurgy

Sn-doped gallium oxide (Ga2O3) wrap-gate fin-array field-effect transistors (finFETs) were formed by top-down BCl3 plasma etching on a native semi-insulating Mg-doped (100) β-Ga2O3 substrate. The fin channels have a triangular cross-section and are approximately 300 nm wide and 200 nm tall. FinFETs, with 20 nm Al2O3 gate dielectric and ∼2 μm wrap-gate, demonstrate normally-off operation with a threshold voltage between 0 and +1 V during high-voltage operation. The ION/IOFF ratio is greater than 105 and is mainly limited by high on-resistance that can be significantly improved. At VG = 0, a finFET with 21 μm gate-drain spacing achieved a three-terminal breakdown voltage exceeding 600 V without a field-plate.

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