Open AccessSystematic study on dynamic atomic layer epitaxy of InN on/in +c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Role of high growth temperature
Author(s) -
Akihiko Yoshikawa,
Kazuhide Kusakabe,
Naoki Hashimoto,
Eunsook S. Hwang,
Daichi Imai,
Takaomi Itoi
Publication year - 2016
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4967928
Subject(s) - molecular beam epitaxy , materials science , epitaxy , monolayer , optoelectronics , bilayer , quantum well , layer (electronics) , crystallography , nanotechnology , chemistry , optics , laser , physics , biochemistry , membrane
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