Output power enhancement of GaN-based flip-chip light-emitting diodes via conical structures generated by a monolayer of nanospheres | Zendy

Mai-Chih Liu | Zendy; Chang-Rong Lin | Zendy; Chia-Hua Chan | Zendy

Open Access

Output power enhancement of GaN-based flip-chip light-emitting diodes via conical structures generated by a monolayer of nanospheres

Author(s) -

Mai-Chih Liu,

Chang-Rong Lin,

Chia-Hua Chan

Publication year - 2016

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4967508

Subject(s) - materials science , optoelectronics , diode , conical surface , monolayer , flip chip , light emitting diode , etching (microfabrication) , chip , layer (electronics) , nanotechnology , composite material , electrical engineering , adhesive , engineering

This letter describes the output power enhancement of the GaN-based flip-chip light-emitting diodes (FC LED) featuring conical structures fabricated by etching a self-assembled monolayer SiO2 spheres as the hard mask. By roughening the surface of FC LED components, it increases structural size of the components and elevates the light extraction efficiency of FC LED. At a constant current of 400 mA, the output power of the FC LED with 1200 nm conical structures is 638.1 mW and enhanced by 6.1% compared with the FC LED without surface roughening

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research