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Nucleation and growth mechanisms of Al2O3 atomic layer deposition on synthetic polycrystalline MoS2
Author(s) -
Haodong Zhang,
Daniele Chiappe,
Johan Meersschaut,
Thierry Conard,
Alexis Franquet,
Thomas Nuytten,
Manuel Mannarino,
Iuliana Radu,
Wilfried Vandervorst,
Annelies Delabie
Publication year - 2016
Publication title -
the journal of chemical physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.071
H-Index - 357
eISSN - 1089-7690
pISSN - 0021-9606
DOI - 10.1063/1.4967406
Subject(s) - nucleation , atomic layer deposition , materials science , crystallite , elastic recoil detection , deposition (geology) , thin film , passivation , chemical engineering , dielectric , nanotechnology , layer (electronics) , analytical chemistry (journal) , chemical physics , crystallography , chemistry , optoelectronics , metallurgy , paleontology , organic chemistry , chromatography , sediment , engineering , biology

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