Probing the charge recombination in rGO decorated mixed phase (anatase-rutile) TiO2 multi-leg nanotubes | Zendy

Y. Rambabu | Zendy; Manu Jaiswal | Zendy; Somnath C. Roy | Zendy

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Probing the charge recombination in rGO decorated mixed phase (anatase-rutile) TiO₂ multi-leg nanotubes

Author(s) -

Y. Rambabu,

Manu Jaiswal,

Somnath C. Roy

Publication year - 2016

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4967387

Subject(s) - anatase , materials science , rutile , dielectric spectroscopy , electrolyte , graphene , phase (matter) , oxide , electron transfer , chemical engineering , electrochemistry , nanotechnology , photocatalysis , chemistry , electrode , photochemistry , biochemistry , organic chemistry , engineering , catalysis , metallurgy

Recombination of photo-generated charges is one of the most significant challenges in designing efficient photo-anode for photo electrochemical water oxidation. In the case of TiO2, mixed phase (anatase-rutile) junctions often shown to be more effective in suppressing electron-hole recombination compared to a single (anatase or rutile) phase. Here, we report the study of bulk and surface recombination process in TiO2 multi-leg nanotube (MLNTs) anatase-rutile (A-R) junctions decorated with reduced graphene oxide (rGO) layers, through an analysis of the photo-current and impedance characteristics. To quantify the charge transport/transfer process involved in these junctions, holes arriving at the interface of semiconductor/electrolyte were collected by adding H2O2 to the electrolyte. This enabled us to interpret the bulk and surface recombination process involved in anatase/rutile/rGO junctions for photo-electrochemical water oxidation. We correlated this quantification to the electrochemical impedance spectroscopy (EIS) measurements, and showed that in anatase/rutile junction the increase in PEC performance was due to suppression in electron-hole recombination rate at the surface states that effectively enhances the hole transfer rate to the electrolyte. On the other hand, in rGO wrapped A-R MLNTs junction it was due to both phenomenon i.e decrease in bulk recombination rate as well as increase in hole transfer rate to the electrolyte at the semiconductor/electrolyte interface

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