Highly-mismatched InAs/InSe heterojunction diodes | Zendy

A. V. Velichko | Zendy; Z. R. Kudrynskyi | Zendy; D. M. Di Paola | Zendy; O. Makarovsky | Zendy; Manoj Kesaria | Zendy; A. Krier | Zendy; Ian Sandall | Zendy; Chee Hing Tan | Zendy; Z. D. Kovalyuk | Zendy; A. Patanè | Zendy

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Highly-mismatched InAs/InSe heterojunction diodes

Author(s) -

A. V. Velichko,

Z. R. Kudrynskyi,

D. M. Di Paola,

O. Makarovsky,

Manoj Kesaria,

A. Krier,

Ian Sandall,

Chee Hing Tan,

Z. D. Kovalyuk,

A. Patanè

Publication year - 2016

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4967381

Subject(s) - rectification , heterojunction , materials science , optoelectronics , diode , infrared , thin film , optics , nanotechnology , power (physics) , physics , quantum mechanics

We report on heterojunction diodes prepared by exfoliation and direct mechanical transfer of a p-type InSe thin film onto an n-type InAs epilayer. We show that despite the different crystal structures and large lattice mismatch (34%) of the component layers, the junctions exhibit rectification behaviour with rectification ratios of 10[superscript]4 at room temperature and broad-band photoresponse in the near infrared and visible spectral ranges

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