Ultra-high carrier mobility InSb film by rapid thermal annealing on glass substrate | Zendy

Charith Jayanada Koswaththage | Zendy; Tatsuya Okada | Zendy; Takashi Noguchi | Zendy; Shinichi Taniguchi | Zendy; Shokichi Yoshitome | Zendy

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Ultra-high carrier mobility InSb film by rapid thermal annealing on glass substrate

Author(s) -

Charith Jayanada Koswaththage,

Tatsuya Okada,

Takashi Noguchi,

Shinichi Taniguchi,

Shokichi Yoshitome

Publication year - 2016

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4967287

Subject(s) - annealing (glass) , materials science , crystallinity , electron mobility , mica , hall effect , epitaxy , substrate (aquarium) , analytical chemistry (journal) , optoelectronics , chemical engineering , electrical resistivity and conductivity , composite material , chemistry , electrical engineering , oceanography , engineering , layer (electronics) , chromatography , geology

InSb films were deposited on both mica and glass substrates using thermal evaporation and subjected to FA or RTA. Crystallinity, composition and electrical properties were investigated. High Hall electron mobility as high as 25,000 cm2/(Vs) was obtained with the capped InSb film by keeping the In:Sb ratio after RTA at 520°C for 30 sec or more without adopting epitaxial growth on glass

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