Open AccessComment on “Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures” [Appl. Phys. Lett. 109, 011604 (2016)]
Author(s) -
Sima Dimitrijev
Publication year - 2016
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4967224
Subject(s) - silicon carbide , epitaxy , silicon , degradation (telecommunications) , materials science , carbide , interface (matter) , condensed matter physics , metallurgy , nanotechnology , physics , composite material , electrical engineering , engineering , layer (electronics) , capillary number , capillary action
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