z-logo
open-access-imgOpen Access
Cooperative dissociations of misfit dislocations at bimetal interfaces
Author(s) -
K. Liu,
Ruifeng Zhang,
Irene J. Beyerlein,
X. Y. Chen,
Hui Yang,
Timothy C. Germann
Publication year - 2016
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.4967207
Subject(s) - bimetal , materials science , stacking , stacking fault energy , partial dislocations , cube (algebra) , crystallography , dissociation (chemistry) , condensed matter physics , lattice (music) , dislocation , stacking fault , crystal structure , chemical physics , composite material , geometry , chemistry , physics , mathematics , nuclear magnetic resonance , acoustics
Using atomistic simulations, several semi-coherent cube-on-cube bimetal interfaces are comparatively investigated to unravel the combined effect of the character of misfit dislocations, the stacking fault energy difference between bimetal pairs, and their lattice mismatch on the dissociation of interfacial misfit dislocations. Different dissociation paths and features under loadings provide several unique deformation mechanisms that are critical for understanding interface strengthening. In particular, applied strains can cause either the formation of global interface coherency by the migration of misfit dislocations from an interface to an adjoining crystal interior or to an alternate packing of stacking faults connected by stair-rod dislocations

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom