Publisher’s Note: “Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement” [AIP Advances 6, 095021 (2016)] | Zendy

Bin Dong | Zendy; Jie Lin | Zendy; Ning Wang | Zendy; Lingli Jiang | Zendy; Zongdai Liu | Zendy; Xiaoyan Hu | Zendy; Kai Cheng | Zendy; Hongyu Yu | Zendy

Open Access

Publisher’s Note: “Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement” [AIP Advances 6, 095021 (2016)]

Author(s) -

Bin Dong,

Jie Lin,

Ning Wang,

Lingli Jiang,

Zongdai Liu,

Xiaoyan Hu,

Kai Cheng,

Hongyu Yu

Publication year - 2016

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4966916

Subject(s) - capacitance , transient (computer programming) , optoelectronics , materials science , trap (plumbing) , transistor , characterization (materials science) , wide bandgap semiconductor , electron mobility , electron , condensed matter physics , nanotechnology , electrical engineering , chemistry , physics , computer science , electrode , engineering , nuclear physics , voltage , meteorology , operating system

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