Thermal diode in gas-filled nanogap with heterogeneous surfaces using nonequilibrium molecular dynamics simulation
Author(s) -
Tadeh Avanessian,
Gisuk Hwang
Publication year - 2016
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4966599
Subject(s) - diode , knudsen number , materials science , thermal , optoelectronics , temperature gradient , nanotechnology , mechanics , thermodynamics , physics , quantum mechanics
Click on the DOI link to access the article (may not be free).A thermal diode serves as a basic building block to design advanced thermal management systems in energy-saving applications. However, the main challenges of existing thermal diodes are poor steady-state performance, slow transient response, and/or extremely difficult manufacturing. In this study, the thermal diode is examined by employing an argon gas-filled nanogap with heterogeneous surfaces in the Knudsen regime, using nonequilibrium molecular dynamics simulation. The asymmetric gas pressure and thermal accommodation coefficients changes are found due to asymmetric adsorptions onto the heterogeneous nanogap with respect to the different temperature gradient directions, and these in turn result in the thermal diode. The maximum degree of diode (or rectification) is R-max similar to 7, at the effective gas-solid interaction ratio between the two surfaces of e* = 0.75. This work could pave the way to designing advanced thermal management systems such as thermal switches (transistors).National Science Foundation under Award No. EPS-0903806 and matching support from the State of Kansas through the Kansas Board of Regents. This work was also partially supported by the start-up fund from the College of Engineering, Wichita State University. This work also used the Extreme Science and Engineering Discovery Environment (XSEDE), which was supported by National Science Foundation Grant No. ACI-1053575
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