Perpendicular magnetic anisotropy of Co\Pt bilayers on ALD HfO2
Author(s) -
Bart Vermeulen,
Jackson M. S. Wu,
Johan Swerts,
Sébastien Couet,
Dimitri Linten,
Iuliana Radu,
K. Temst,
Geert Rampelberg,
Christophe Detavernier,
G. Groeseneken,
Koen Martens
Publication year - 2016
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4966121
Subject(s) - materials science , spintronics , annealing (glass) , magnetic anisotropy , condensed matter physics , dielectric , transmission electron microscopy , atomic layer deposition , epitaxy , bilayer , magnetoresistive random access memory , anisotropy , magnetometer , nuclear magnetic resonance , thin film , optoelectronics , ferromagnetism , nanotechnology , layer (electronics) , magnetization , chemistry , magnetic field , optics , random access memory , composite material , physics , membrane , computer science , biochemistry , quantum mechanics , computer hardware
Perpendicular Magnetic Anisotropy (PMA) is a key requirement for state of the art Magnetic Random Access Memories (MRAM). Currently, PMA has been widely reported in standard Magnetic Tunnel Junction material stacks using MgO as a dielectric. In this contribution, we present the first report of PMA at the interface with a high-kappa dielectric grown by Atomic Layer Deposition, HfO2. The PMA appears after annealing a HfO2\Co\Pt\Ru stack in N-2 with the K-eff of 0.25 mJ/m(2) as determined by Vibrating Sample Magnetometry. X-Ray Diffraction and Transmission Electron Microscopy show that the appearance of PMA coincides with interdiffusion and the epitaxial ordering of the Co\Pt bilayer. High-kappa dielectrics are especially interesting for Voltage Control of Magnetic Anisotropy applications and are of potential interest for low-power MRAM and spintronics technologies. Published by AIP Publishing
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