Microstructure and intrinsic stress evolution during epitaxial film growth of an Ag0.93Al0.07 solid solution on Si(111); excessive planar faulting due to quantum confinement | Zendy

David Flötotto | Zendy; Z. M. Wang | Zendy; Ingo Jürgen Markel | Zendy; S.J.B. Kurz | Zendy; E. J. Mittemeijer | Zendy

Open Access

Microstructure and intrinsic stress evolution during epitaxial film growth of an Ag0.93Al0.07 solid solution on Si(111); excessive planar faulting due to quantum confinement

Author(s) -

David Flötotto,

Z. M. Wang,

Ingo Jürgen Markel,

S.J.B. Kurz,

E. J. Mittemeijer

Publication year - 2016

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.4964945

Subject(s) - materials science , epitaxy , transmission electron microscopy , electron diffraction , stacking fault , island growth , microstructure , dislocation , thin film , planar , surface energy , scanning tunneling microscope , crystallography , condensed matter physics , diffraction , composite material , nanotechnology , layer (electronics) , optics , chemistry , physics , computer graphics (images) , computer science

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