Investigation of switching region in superlattice phase change memories | Zendy

Takasumi Ohyanagi | Zendy; N. Takaura | Zendy

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Investigation of switching region in superlattice phase change memories

Author(s) -

Takasumi Ohyanagi,

N. Takaura

Publication year - 2016

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4964729

Subject(s) - superlattice , materials science , stack (abstract data type) , layer (electronics) , electrode , phase change memory , optoelectronics , phase (matter) , condensed matter physics , nanotechnology , chemistry , physics , organic chemistry , computer science , programming language

We investigated superlattice phase change memories (PCMs) to clarify which regions were responsible for switching. We observed atomic structures in a superlattice PCM film with a stack of GeTe / Sb2Te3 layers using atomically resolved EDX maps, and we found an intermixed region with three atom species of the Ge, Sb and Te around the top GeTe layer under the top electrode. We also found that a device with a GeTe layer on an Sb2Te3 layer without superlattice structure had the same switching characteristics as a device with a superlattice PCM, that had the same top GeTe layer. We developed and fabricated a modified superlattice PCM that attained ultra low Reset / Set currents under 60 μA

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