Interplay between relaxation and Sn segregation during thermal annealing of GeSn strained layers | Zendy

C.M. Comrie | Zendy; C. Mtshali | Zendy; P. Sechogela | Zendy; Nuno M. Santos | Zendy; K. van Stiphout | Zendy; Roger Loo | Zendy; Wilfried Vandervorst | Zendy; A. Vantomme | Zendy

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Interplay between relaxation and Sn segregation during thermal annealing of GeSn strained layers

Author(s) -

C.M. Comrie,

C. Mtshali,

P. Sechogela,

Nuno M. Santos,

K. van Stiphout,

Roger Loo,

Wilfried Vandervorst,

A. Vantomme

Publication year - 2016

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.4964692

Subject(s) - rutherford backscattering spectrometry , channelling , annealing (glass) , materials science , epitaxy , stress relaxation , diffraction , wafer , crystallography , lattice (music) , analytical chemistry (journal) , relaxation (psychology) , condensed matter physics , thin film , chemistry , layer (electronics) , optoelectronics , optics , nanotechnology , metallurgy , ion , social psychology , psychology , creep , physics , organic chemistry , chromatography , acoustics

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