Open AccessBN/BNSiO2 sputtering yield shape profiles under stationary plasma thruster operating conditions
Author(s) -
Mukesh Ranjan,
Anshul Sharma,
Amrish Vaid,
Tejal D. Bhatt,
V. Nandalan,
M. G. James,
H. Revathi,
S. Mukherjee
Publication year - 2016
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4964312
Subject(s) - sputtering , boron nitride , quartz crystal microbalance , yield (engineering) , materials science , silicon , ion , silicon nitride , xenon , analytical chemistry (journal) , plasma , range (aeronautics) , atomic physics , chemistry , thin film , optoelectronics , nanotechnology , composite material , adsorption , physics , nuclear physics , organic chemistry , chromatography
Quartz Crystal Microbalance (QCM) is used to measure the volumetric and total sputtering yield of Boron Nitride (BN) and Boron Nitride Silicon Dioxide (BNSiO2) bombarded by Xenon ions in the energy range of 100 eV to 550 eV. Sputtering yield shape profiles are reported at various angles of incidence 0-85° with surface normal and compared with modified Zhang model. The yield shape profile is found to be symmetric at normal incidence and asymmetric at oblique incidence. Both the materials show a sudden jump in the sputtering yield above 500 eV and at an angle of incidence in the range of 45-65°. Erosion of BN at as low as 74 eV ion energy is predicted using generalized Bohdansky model. BNSiO2 show a marginally higher sputtering yield compare to BN
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