A thermally robust and thickness independent ferroelectric phase in laminated hafnium zirconium oxide | Zendy

S. Riedel | Zendy; P. Polakowski | Zendy; Johannes Müller | Zendy

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A thermally robust and thickness independent ferroelectric phase in laminated hafnium zirconium oxide

Author(s) -

S. Riedel,

P. Polakowski,

Johannes Müller

Publication year - 2016

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4964300

Subject(s) - ferroelectricity , materials science , thin film , hafnium , zirconium , thermal stability , optoelectronics , oxide , nanotechnology , chemical engineering , dielectric , metallurgy , engineering

Ferroelectric properties in hafnium oxide based thin films have recovered the scaling potential for ferroelectric memories due to their ultra-thin-film- and CMOS-compatibility. However, the variety of physical phenomena connected to ferroelectricity allows a wider range of applications for these materials than ferroelectric memory. Especially mixed HfxZr1-xO2 thin films exhibit a broad compositional range of ferroelectric phase stability and provide the possibility to tailor material properties for multiple applications. Here it is shown that the limited thermal stability and thick-film capability of HfxZr1-xO2 can be overcome by a laminated approach using alumina interlayers

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