Open AccessHigh-photovoltage GaAs vertical epitaxial monolithic heterostructures with 20 thin p/n junctions and a conversion efficiency of 60%
Author(s) -
S. Fafard,
F. Proulx,
M. C. A. York,
Laura Savoldi,
PhilippeOlivier Provost,
Richard Arès,
Vincent Aimez,
Denis Masson
Publication year - 2016
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4964120
Subject(s) - heterojunction , quantum efficiency , optoelectronics , materials science , energy conversion efficiency , epitaxy , thin film , wavelength , quantum well , photovoltaic system , optics , physics , nanotechnology , electrical engineering , laser , engineering , layer (electronics)
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