Open AccessRole of V-pits in the performance improvement of InGaN solar cells
Author(s) -
Muhammad Arif,
JeanPaul Salvestrini,
Jérémy Streque,
Matthew B. Jordan,
Youssef El Gmili,
Suresh Sundaram,
Xin Li,
G. Patriarche,
Paul L. Voss,
A. Ougazzaden
Publication year - 2016
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4963817
Subject(s) - optoelectronics , metalorganic vapour phase epitaxy , materials science , heterojunction , quantum efficiency , energy conversion efficiency , current density , wide bandgap semiconductor , solar cell , charge carrier density , short circuit , doping , nanotechnology , epitaxy , physics , voltage , layer (electronics) , quantum mechanics
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