Open AccessEdge structures and properties of triangular antidots in single-layer MoS2
Author(s) -
LiYong Gan,
Yingchun Cheng,
Udo Schwingenschlögl,
Yingbang Yao,
Yong Sheng Zhao,
Xixiang Zhang,
Wei Huang
Publication year - 2016
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4962132
Subject(s) - zigzag , enhanced data rates for gsm evolution , materials science , density functional theory , condensed matter physics , scanning electron microscope , etching (microfabrication) , layer (electronics) , crystallography , atmospheric temperature range , atom (system on chip) , doping , scanning tunneling microscope , nanotechnology , optoelectronics , chemistry , computational chemistry , geometry , physics , composite material , telecommunications , mathematics , meteorology , computer science , embedded system
Density functional theory and experiments are employed to shed light on the edge structures of antidots in O etched single-layer MoS2. The equilibrium morphology is found to be the zigzag Mo edge with each Mo atom bonded to two O atoms, in a wide range of O chemical potentials. Scanning electron microscopy shows that the orientation of the created triangular antidots is opposite to the triangular shape of the single-layer MoS2 samples, in agreement with the theoretical predictions. Furthermore, edges induced by O etching turn out to be p-doped, suggesting an effective strategy to realize p-type MoS2 devices. Published by AIP Publishing
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom