Open AccessFabrication and independent control of patterned polymer gate for a few-layer WSe2 field-effect transistor
Author(s) -
Sung Ju Hong,
MinSik Park,
Hojin Kang,
Minwoo Lee,
Dae Hong Jeong,
Yung Woo Park
Publication year - 2016
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4961990
Subject(s) - tungsten diselenide , materials science , fabrication , field effect transistor , optoelectronics , transistor , semiconductor , nanotechnology , molybdenum disulfide , layer (electronics) , polymer , transistor array , tungsten , cmos , transition metal , electrical engineering , chemistry , voltage , composite material , amplifier , biochemistry , metallurgy , catalysis , medicine , alternative medicine , pathology , engineering
We report the fabrication of a patterned polymer electrolyte for a two-dimensional (2D) semiconductor, few-layer tungsten diselenide (WSe2) field-effect transistor (FET). We expose an electron-beam in a desirable region to form the patterned structure. The WSe2 FET acts as a p-type semiconductor in both bare and polymer-covered devices. We observe a highly efficient gating effect in the polymer-patterned device with independent gate control. The patterned polymer gate operates successfully in a molybdenum disulfide (MoS2) FET, indicating the potential for general applications to 2D semiconductors. The results of this study can contribute to large-scale integration and better flexibility in transition metal dichalcogenide (TMD)-based electronics
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