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An electron emitting probe in saturated floating potential mode has been used to investigate the temporal evolution of plasma potential and the effect of substrate RF biasing on it for pulsed dual frequency (2 MHz/13.56 MHz) inductively coupled plasma (ICP) source. The low frequency power (P2MHz) has been pulsed at 1 KHz and a duty ratio of 50%, while high frequency power (P13.56MHz) has been used in continuous mode. The substrate has been biased with a separate bias power at (P12.56MHz) Argon has been used as a discharge gas. During the ICP power pulsing, three distinct regions in a typical plasma potential profile, have been identified as ‘initial overshoot’, pulse ‘on-phase’ and pulse ‘off-phase’. It has been found out that the RF biasing of the substrate significantly modulates the temporal evolution of the plasma potential. During the initial overshoot, plasma potential decreases with increasing RF biasing of the substrate, however it increases with increasing substrate biasing for pulse ‘on-phase’ and ‘off-phase’. An interesting structure in plasma potential profile has also been observed when the substrate bias is applied and its evolution depends upon the magnitude of bias power. The reason of the evolution of this structure may be the ambipolar diffusion of electron and its dependence on bias power

Transient plasma potential in pulsed dual frequency inductively coupled plasmas and effect of substrate biasing