Molecular beam epitaxy growth of Al-rich AlGaN nanowires for deep ultraviolet optoelectronics | Zendy

Songrui Zhao | Zendy; Steffi Y. Woo | Zendy; Sharif Md. Sadaf | Zendy; Yuanpeng Wu | Zendy; Alexandre Pofelski | Zendy; David Laleyan | Zendy; Roksana Tonny Rashid | Zendy; Yongjie Wang | Zendy; Gianluigi A. Botton | Zendy; Zetian Mi | Zendy

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Molecular beam epitaxy growth of Al-rich AlGaN nanowires for deep ultraviolet optoelectronics

Author(s) -

Songrui Zhao,

Steffi Y. Woo,

Sharif Md. Sadaf,

Yuanpeng Wu,

Alexandre Pofelski,

David Laleyan,

Roksana Tonny Rashid,

Yongjie Wang,

Gianluigi A. Botton,

Zetian Mi

Publication year - 2016

Publication title -

apl materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.571

H-Index - 60

ISSN - 2166-532X

DOI - 10.1063/1.4961680

Subject(s) - molecular beam epitaxy , materials science , nanowire , optoelectronics , ultraviolet , light emitting diode , epitaxy , substrate (aquarium) , ternary operation , wavelength , wide bandgap semiconductor , nanotechnology , layer (electronics) , computer science , programming language , oceanography , geology

Self-organized AlGaN nanowires by molecular beam epitaxy have attracted significant attention for deep ultraviolet optoelectronics. However, due to the strong compositional modulations under conventional nitrogen rich growth conditions, emission wavelengths less than 250 nm have remained inaccessible. Here we show that Al-rich AlGaN nanowires with much improved compositional uniformity can be achieved in a new growth paradigm, wherein a precise control on the optical bandgap of ternary AlGaN nanowires can be achieved by varying the substrate temperature. AlGaN nanowire LEDs, with emission wavelengths spanning from 236 to 280 nm, are also demonstrated

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