Lead free CH3NH3SnI3 perovskite thin-film with p-type semiconducting nature and metal-like conductivity | Zendy

Anastasiia Iefanova | Zendy; Nirmal Adhikari | Zendy; Ashish Dubey | Zendy; Devendra Khatiwada | Zendy; Qiquan Qiao | Zendy

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Lead free CH3NH3SnI3 perovskite thin-film with p-type semiconducting nature and metal-like conductivity

Author(s) -

Anastasiia Iefanova,

Nirmal Adhikari,

Ashish Dubey,

Devendra Khatiwada,

Qiquan Qiao

Publication year - 2016

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4961463

Subject(s) - crystallinity , photocurrent , materials science , thin film , scanning electron microscope , perovskite (structure) , conductivity , photoconductivity , absorption (acoustics) , absorption spectroscopy , layer (electronics) , electrical resistivity and conductivity , analytical chemistry (journal) , chemical engineering , optoelectronics , nanotechnology , chemistry , optics , composite material , organic chemistry , physics , electrical engineering , engineering

Lead free CH3NH3SnI3 perovskite thin film was prepared by low temperature solution processing and characterized using current sensing atomic force microscopy (CS-AFM). Analysis of electrical, optical, and optoelectrical properties reveals unique p-type semiconducting nature and metal like conductivity of this material. CH3NH3SnI3 film also showed a strong absorption in visible and near infrared spectrum with absorption onset of 1.3 eV. X-ray Diffraction analysis and scanning electron microscopy (SEM) confirmed a structure of this compound and uniform film formation. The morphology, film uniformity, light harvesting and electrical properties strongly depend on preparation method and precursor solution. CH3NH3SnI3 films prepared based on dimethylformamide (DMF) showed higher crystallinity and light harvesting capability compared to the film based on combination of dimethyl sulfoxide (DMSO) with gamma-butyrolactone (GBL). Local photocurrent mapping analysis showed that CH3NH3SnI3 can be used as an active layer and have a potential to fabricate lead free photovoltaic devices

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