High temperature reactive ion etching of iridium thin films with aluminum mask in CF4/O2/Ar plasma | Zendy

Chia-Pin Yeh | Zendy; Marco Lisker | Zendy; Bodo Kalkofen | Zendy; Edmund P. Burte | Zendy

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High temperature reactive ion etching of iridium thin films with aluminum mask in CF4/O2/Ar plasma

Author(s) -

Chia-Pin Yeh,

Marco Lisker,

Bodo Kalkofen,

Edmund P. Burte

Publication year - 2016

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4961447

Subject(s) - iridium , reactive ion etching , etching (microfabrication) , aluminium , materials science , substrate (aquarium) , analytical chemistry (journal) , dry etching , thin film , chemistry , metallurgy , nanotechnology , layer (electronics) , catalysis , oceanography , chromatography , geology , biochemistry

Reactive ion etching (RIE) technology for iridium with CF4/O2/Ar gas mixtures and aluminum mask at high temperatures up to 350 °C was developed. The influence of various process parameters such as gas mixing ratio and substrate temperature on the etch rate was studied in order to find optimal process conditions. The surface of the samples after etching was found to be clean under SEM inspection. It was also shown that the etch rate of iridium could be enhanced at higher process temperature and, at the same time, very high etching selectivity between aluminum etching mask and iridium could be achieved

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