Effective mobility enhancement of amorphous In-Ga-Zn-O thin-film transistors by holographically generated periodic conductor | Zendy

Jaewook Jeong | Zendy; Joonwoo Kim | Zendy; Donghyun Kim | Zendy; Heonsu Jeon | Zendy; Soon Moon Jeong | Zendy; Yongtaek Hong | Zendy

Open Access

Effective mobility enhancement of amorphous In-Ga-Zn-O thin-film transistors by holographically generated periodic conductor

Author(s) -

Jaewook Jeong,

Joonwoo Kim,

Donghyun Kim,

Heonsu Jeon,

Soon Moon Jeong,

Yongtaek Hong

Publication year - 2016

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4961379

Subject(s) - thin film transistor , materials science , amorphous solid , conductor , optoelectronics , transistor , electron mobility , layer (electronics) , semiconductor , lithography , indium , nanotechnology , composite material , voltage , chemistry , electrical engineering , crystallography , engineering

In this study, we demonstrate a mobility enhancement structure for fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) by embedding a holographically generated periodic nano-conductor in the back-channel regions. The intrinsic field-effect mobility was enhanced up to 2 times compared to that of a reference sample. The enhancement originated from a decrease in the effective channel length due to the highly conductive nano-conductor region. By combining conventional and holographic lithography, the performance of the a-IGZO TFT can be effectively improved without varying the composition of the channel layer

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