Open AccessDark current investigation in thin P-i-N InGaAs photodiodes for nano-resonators
Author(s) -
Michaël Verdun,
G. Beaudoin,
Benjamin Portier,
Nathalie Bardou,
Christophe Dupuis,
I. Sagnes,
Riad Haïdar,
Fabrice Pardo,
Jean-Luc Pélouard
Publication year - 2016
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4961327
Subject(s) - optoelectronics , dark current , photodiode , materials science , resonator , quantum efficiency , gallium arsenide , quantum well , thin film , active layer , epitaxy , photodetector , quantum tunnelling , optics , layer (electronics) , nanotechnology , laser , physics , thin film transistor
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom