Low resistance Ohmic contact to p-type crystalline silicon via nitrogen-doped copper oxide films
Author(s) -
Xinyu Zhang,
Yimao Wan,
James Bullock,
Thomas Allen,
Andrés Cuevas
Publication year - 2016
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4960529
Subject(s) - ohmic contact , materials science , silicon , x ray photoelectron spectroscopy , raman spectroscopy , substrate (aquarium) , electrical resistivity and conductivity , contact resistance , sputtering , doping , copper , oxide , copper oxide , thin film , chemical engineering , metallurgy , nanotechnology , optoelectronics , optics , layer (electronics) , oceanography , physics , electrical engineering , geology , engineering
This work explores the application of transparent nitrogen doped copper oxide (CuOx:N) films deposited by reactive sputtering to create hole-selective contacts for p-type crystalline silicon (c-Si) solar cells. It is found that CuOx:N sputtered directly onto crystalline silicon is able to form an Ohmic contact. X-ray photoelectron spectroscopy and Raman spectroscopy measurements are used to characterise the structural and physical properties of the CuOx:N films. Both the oxygen flow rate and the substrate temperature during deposition have a significant impact on the film composition, as well as on the resulting contact resistivity. After optimization, a low contact resistivity of ∼10 mΩ cm2 has been established. This result offers significant advantages over conventional contact structures in terms of carrier transport and device fabrication.
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