Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC | Zendy

Emanuela Schilirò | Zendy; Raffaella Lo Nigro | Zendy; Patrick Fiorenza | Zendy; Fabrizio Roccaforte | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Negative charge trapping effects in Al₂O₃ films grown by atomic layer deposition onto thermally oxidized 4H-SiC

Author(s) -

Emanuela Schilirò,

Raffaella Lo Nigro,

Patrick Fiorenza,

Fabrizio Roccaforte

Publication year - 2016

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4960213

Subject(s) - trapping , materials science , atomic layer deposition , silicon carbide , hysteresis , deposition (geology) , layer (electronics) , stress (linguistics) , analytical chemistry (journal) , permittivity , silicon , capacitance , chemical vapor deposition , activation energy , thin film , dielectric , optoelectronics , condensed matter physics , chemistry , nanotechnology , electrode , composite material , ecology , paleontology , linguistics , philosophy , chromatography , physics , sediment , biology

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research