Open AccessErratum: “Analysis of plasma-modes of a gated bilayer system in high electron mobility transistors” [J. Appl. Phys. 119, 193102 (2016)]
Author(s) -
Shubhendu Bhardwaj,
Siddharth Rajan,
John L. Volakis
Publication year - 2016
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4960091
Subject(s) - bilayer , transistor , electron , plasma , condensed matter physics , materials science , physics , chemistry , quantum mechanics , membrane , biochemistry , voltage
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