Open AccessEffect of top gate potential on bias-stress for dual gate amorphous indium-gallium-zinc-oxide thin film transistor
Author(s) -
Minkyu Chun,
Jae Gwang Um,
Min Sang Park,
Md Delwar Hossain Chowdhury,
Jin Jang
Publication year - 2016
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4960014
Subject(s) - materials science , thin film transistor , amorphous solid , threshold voltage , x ray photoelectron spectroscopy , optoelectronics , biasing , indium , gate oxide , stress (linguistics) , transistor , layer (electronics) , electrical engineering , voltage , nanotechnology , chemistry , crystallography , nuclear magnetic resonance , physics , engineering , linguistics , philosophy
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom