Open AccessEffects of mid-gap defects and barrier interface reactions on tunneling behaviors of ZnO-i-Si heterojunctions
Author(s) -
Chun-Fu Chang,
P. V. Wadekar,
Wan-Chen Hsieh,
WenYen Lin,
Yusheng Wang,
Jun-Hau Wang,
Jyun-Jie Lin,
HuiChun Huang,
ChingWen Chang,
Li-Wei Tu,
Chih-Hsiung Liao,
Hua-Hsien Liao,
NewJin Ho,
Hye-Won Seo,
Quark Y. Chen,
WeiKan Chu
Publication year - 2016
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4960012
Subject(s) - quantum tunnelling , heterojunction , annealing (glass) , materials science , optoelectronics , leakage (economics) , diode , rectification , semiconductor , doping , wide bandgap semiconductor , barrier layer , nanotechnology , layer (electronics) , electrical engineering , voltage , composite material , economics , macroeconomics , engineering
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