Open AccessConducting interface states at LaInO3/BaSnO3 polar interface controlled by Fermi level
Author(s) -
Useong Kim,
Chulkwon Park,
Young Mo Kim,
Juyeon Shin,
K. Char
Publication year - 2016
Publication title -
apl materials
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.4959960
Subject(s) - materials science , conductance , fermi level , polar , doping , condensed matter physics , polarization (electrochemistry) , band gap , perovskite (structure) , optoelectronics , crystallography , chemistry , physics , electron , quantum mechanics , astronomy
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