Growth of monolithic full-color GaN-based LED with intermediate carrier blocking layers
Author(s) -
Hussein S. ElGhoroury,
Milton Yeh,
J. C. Chen,
X. Li,
ChihLi Chuang
Publication year - 2016
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4959897
Subject(s) - light emitting diode , optoelectronics , materials science , chemical vapor deposition , quantum well , wavelength , metalorganic vapour phase epitaxy , nitride , visible spectrum , doping , optics , nanotechnology , laser , layer (electronics) , physics , epitaxy
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