Characteristics of InGaAsBi with various lattice mismatches on InP substrate
Author(s) -
XiaoYa Chen,
Yan Gu,
Yonggang Zhang,
S. P. Xi,
Binyang Du,
Y. J.,
Weiguang Ji,
Yaqing Shi
Publication year - 2016
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4959896
Subject(s) - photoluminescence , lattice constant , diffraction , materials science , bismuth , acceptor , band gap , lattice (music) , crystal structure , analytical chemistry (journal) , hall effect , x ray crystallography , optoelectronics , alloy , condensed matter physics , optics , crystallography , chemistry , electrical resistivity and conductivity , physics , chromatography , quantum mechanics , acoustics , metallurgy , composite material
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