Open AccessEpitaxial growth of GaN films on nearly lattice-matched hafnium substrates using a low-temperature growth technique
Author(s) -
H. R. Kim,
Jitsuo Ohta,
S. Inoue,
Kohei Ueno,
Atsushi Kobayashi,
Hiroshi Fujioka
Publication year - 2016
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.4959119
Subject(s) - materials science , epitaxy , annealing (glass) , crystallite , optoelectronics , hafnium , wide bandgap semiconductor , layer (electronics) , crystallography , analytical chemistry (journal) , composite material , metallurgy , chemistry , zirconium , chromatography
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