Open AccessDirect gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes
Author(s) -
Charutha Senaratne,
P. Wallace,
James Gallagher,
Patrick Sims,
John Kouvetakis,
J. Menéndez
Publication year - 2016
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4956439
Subject(s) - materials science , optoelectronics , photodiode , diode , band gap , antimonide , amorphous solid , fabrication , electroluminescence , nanotechnology , chemistry , crystallography , layer (electronics) , medicine , alternative medicine , pathology
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom