Bandgap modulation in photoexcited topological insulator Bi2Te3 via atomic displacements
Author(s) -
Masaki Hada,
Katsura Norimatsu,
Seiichi Tanaka,
Sercan Keskin,
Tetsuya Tsuruta,
Kyushiro Igarashi,
T. Ishikawa,
Yōsuke Kayanuma,
R. J. Dwayne Miller,
Ken Onda,
T. Sasagawa,
Shinya Koshihara,
Kazutaka G. Nakamura
Publication year - 2016
Publication title -
the journal of chemical physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.071
H-Index - 357
eISSN - 1089-7690
pISSN - 0021-9606
DOI - 10.1063/1.4955188
Subject(s) - photoexcitation , topological insulator , band gap , bismuth , electronic structure , materials science , infrared , spectroscopy , optoelectronics , chemistry , molecular physics , atomic physics , condensed matter physics , physics , optics , excited state , quantum mechanics , metallurgy
The atomic and electronic dynamics in the topological insulator (TI) Bi2Te3 under strong photoexcitation were characterized with time-resolved electron diffraction and time-resolved mid-infrared spectroscopy. Three-dimensional TIs characterized as bulk insulators with an electronic conduction surface band have shown a variety of exotic responses in terms of electronic transport when observed under conditions of applied pressure, magnetic field, or circularly polarized light. However, the atomic motions and their correlation between electronic systems in TIs under strong photoexcitation have not been explored. The artificial and transient modification of the electronic structures in TIs via photoinduced atomic motions represents a novel mechanism for providing a comparable level of bandgap control. The results of time-domain crystallography indicate that photoexcitation induces two-step atomic motions: first bismuth and then tellurium center-symmetric displacements. These atomic motions in Bi2Te3 trigger 10% bulk bandgap narrowing, which is consistent with the time-resolved mid-infrared spectroscopy results
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