Open AccessBand alignment of type I at (100)ZnTe/PbSe interface
Author(s) -
I. Konovalov,
В. М. Емельянов,
R. Linke
Publication year - 2016
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4955092
Subject(s) - band offset , band gap , extrapolation , materials science , semiconductor , semimetal , ion , condensed matter physics , valence band , electrolyte , offset (computer science) , direct and indirect band gaps , wide bandgap semiconductor , electronic band structure , lattice (music) , optoelectronics , molecular physics , chemistry , physics , electrode , mathematical analysis , mathematics , organic chemistry , computer science , acoustics , programming language
A junction of lattice-matched cubic semiconductors ZnTe and PbSe results in a band alignment of type I so that the narrow band gap of PbSe is completely within the wider band gap of ZnTe. The valence band offset of 0.27 eV was found, representing a minor barrier during injection of holes from PbSe into ZnTe. Simple linear extrapolation of the valence band edge results in a smaller calculated band offset, but a more elaborate square root approximation was used instead, which accounts for parabolic bands. PbSe was electrodeposited at room temperature with and without Cd2+ ions in the electrolyte. Although Cd adsorbs at the surface, the presence of Cd in the electrolyte does not influence the band offset
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