Electrical properties and interfacial issues of high-k/Si MIS capacitors characterized by the thickness of Al2O3 interlayer | Zendy

Xing Wang | Zendy; Hongxia Liu | Zendy; Chenxi Fei | Zendy; Lü Zhao | Zendy; Shupeng Chen | Zendy; Shulong Wang | Zendy

Open Access

Electrical properties and interfacial issues of high-k/Si MIS capacitors characterized by the thickness of Al2O3 interlayer

Author(s) -

Xing Wang,

Hongxia Liu,

Chenxi Fei,

Lü Zhao,

Shupeng Chen,

Shulong Wang

Publication year - 2016

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4955001

Subject(s) - materials science , capacitor , substrate (aquarium) , oxide , transmission electron microscopy , leakage (economics) , layer (electronics) , diffusion barrier , diffusion , silicon , vacancy defect , composite material , optoelectronics , chemical engineering , nanotechnology , condensed matter physics , voltage , electrical engineering , metallurgy , oceanography , physics , engineering , economics , macroeconomics , geology , thermodynamics

A thin Al2O3 interlayer deposited between La2O3 layer and Si substrate was used to scavenge the interfacial layer (IL) by blocking the out-diffusion of substrate Si. Some advantages and disadvantages of this method were discussed in detail. Evident IL reduction corroborated by the transmission electron microscopy results suggested the feasibility of this method in IL scavenging. Significant improvements in oxygen vacancy and leakage current characteristics were achieved as the thickness of Al2O3 interlayer increase. Meanwhile, some disadvantages such as the degradations in interface trap and oxide trapped charge characteristics were also observed

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